MALVERN, PA — (Marketwire) — 12/10/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new series of surface-mount PAR® transient voltage suppressors (TVS) in the SMC DO-214AB package. For automotive and telecom applications, 5KASMC series devices feature high surge capability to 5 kW at 10/1000 microseconds and an operating junction temperature range from – 65 degrees C to + 185 degrees C.The TVS devices released today offer 233 % higher surge capability than conventional 1
SAN JOSE, CA — (Marketwire) — 12/07/12 — Micrel, Incorporated (NASDAQ: MCRL), a leading global manufacturer of IC solutions for the worldwide high performance linear and power, LAN and timing and communications markets, announced today that the Company-s Board of Directors has authorized an accelerated quarterly cash dividend of $0.0425 per share of common stock. This accelerated dividend is intended by the Board to be in lieu of the quarterly dividend Micrel would have otherwise announced w
MALVERN, PA — (Marketwire) — 12/06/12 — Vishay Intertechnology Inc. (NYSE: VSH) today introduced a new AEC-Q101-qualified, 40 V n-channel TrenchFET® power MOSFET. Specifically for "heavy duty" automotive applications, the SQM200N04-1m1L is Vishay-s first power MOSFET to take advantage of the low resistance contribution and very high current rating of the 7-pin D²PAK package.When combined with Vishay-s high-density n-channel TrenchFET technology, the result is an ultra-low
GENEVA — (Marketwire) — 12/06/12 — STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, was named a Thomson Reuters 2012 Top 100 Global Innovator this weekrecognizing its achievements as one of the world-s most innovative companies. The program, an initiative of the IP Solutions business of Thomson Reuters, honors corporations and institutions around the world that are at the heart of innovation as measured by a seri
MALVERN, PA — (Marketwire) — 11/26/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today released the , the industry-s first – 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 milliohms maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PC
Held Jointly With the China Power Supply Society, Seminar to Explore Capacitors, Resistors, Inductors, MOSFETs, Power Modules, and Diodes in New Energy, Military, Communications, and Industrial Applications
