Alliance Memory Strengthens Customer Support Team, Appoints Winner Chen as Field Application Engineer

Alliance Memory Strengthens Customer Support Team, Appoints Winner Chen as Field Application Engineer

SAN CARLOS, CA — (Marketwired) — 09/22/14 — Alliance Memory today announced that the company has bolstered its customer support team with the addition of Winner Chen as field application engineer. Serving as a valuable resource for designers utilizing Alliance Memory–s legacy ICs, Mr. Chen will assist in solving technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware while fielding requests for IBIS models, information on ESD le

Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With 256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities

Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With 256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities

SAN CARLOS, CA — (Marketwired) — 09/16/14 — Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.With each new product generation, desi

Alliance Memory Announces Global Distribution Agreement With Digi-Key

Alliance Memory Announces Global Distribution Agreement With Digi-Key

SAN CARLOS, CA — (Marketwired) — 12/16/13 — Alliance Memory today announced a global distribution agreement with Digi-Key, a leading online electronic component distributor. Under the agreement, Digi-Key is now carrying and providing technical support for Alliance Memory-s entire lineup of SRAMs and DRAMs.Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; wide voltage low-power devices with densities from 64

Alliance Memory Releases 2M x 32 and 4M x 32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages

Alliance Memory Releases 2M x 32 and 4M x 32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages

SAN CARLOS, CA — (Marketwired) — 11/05/13 — Alliance Memory today extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package.The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For t

Alliance Memory Introduces New High-Speed CMOS Double Data Rate (DDR1) Synchronous DRAMs With 64-Mb, 128-Mb, 256-Mb, and 512-Mb Densities in 66-Pin TSOP II Packages

Alliance Memory Introduces New High-Speed CMOS Double Data Rate (DDR1) Synchronous DRAMs With 64-Mb, 128-Mb, 256-Mb, and 512-Mb Densities in 66-Pin TSOP II Packages

SAN CARLOS, CA — (Marketwired) — 09/18/13 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1).The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and they are part

Alliance Memory Appoints Ted Kasahara as Country Manager, Japan

Alliance Memory Appoints Ted Kasahara as Country Manager, Japan

SAN CARLOS, CA — (Marketwired) — 09/16/13 — Alliance Memory today announced that it has bolstered support for its customers in Japan with the appointment of Ted Kasahara as country manager. In his new role, Mr. Kasahara is responsible for developing and maintaining strong relationships with Alliance Memory-s customers in the Japanese market."We-ve been very successful in penetrating the Japan market with our SRAM and synchronous DRAM products over the past few years, and the addition of

Alliance Memory Appoints Mars Zhang as Country Manager, China

Alliance Memory Appoints Mars Zhang as Country Manager, China

SAN CARLOS, CA — (Marketwired) — 08/27/13 — Alliance Memory today announced that it has bolstered support for its customers in China with the appointment of Mars Zhang as country manager. In his new role, Zhang is responsible for developing and maintaining strong relationships with Alliance Memory-s customers in China."Over the past few years, Alliance has added key distributors in China while introducing new SRAM and synchronous DRAM products," said William Chen, director of sales

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs in 48-Pin TSOP-I and 48-Ball TFBGA Packages

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs in 48-Pin TSOP-I and 48-Ball TFBGA Packages

SAN CARLOS, CA — (Marketwired) — 06/11/13 — Alliance Memory today expands its line of legacy high-speed CMOS SRAMs with two new 16M ICs. Featuring fast access times of 10 ns, the AS7C316096A (2048K x 8) and AS7C316098A (1024K x 16) are both offered in the 48-pin, 12-mm by 20-mm TSOP-1 package. In addition, the AS7C316098A is available in the 48-ball, 6-mm by 8-mm TFBGA package.The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar sol

Alliance Memory Launches New High-Density, Low-Power 32M CMOS SRAM Offering 2.7-V to 3.6-V Power Supply in 12-mm by 20-mm TSOP-I Package

Alliance Memory Launches New High-Density, Low-Power 32M CMOS SRAM Offering 2.7-V to 3.6-V Power Supply in 12-mm by 20-mm TSOP-I Package

SAN CARLOS, CA — (Marketwired) — 05/01/13 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company-s highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.The dev