Vishay Launches – 20 V P-Channel MOSFET in 3.3 mm Square Package With Industry-Low On-Resistance of 4.8 Milliohms at a 4.5 V Gate Drive
MALVERN, PA — (Marketwire) — 11/26/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today released the , the industry-s first – 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 milliohms maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PC