Vishay Intertechnology Releases New 45 V TMBS(R) Trench MOS Barrier Schottky Rectifiers in Low-Profile SlimSMA(TM) Package
High Current Density Devices Feature Forward Currents to 5 A and VF Down to 0.37 V
Vishay Intertechnology Captures Three Spots on EDN Magazine-s List of Hot 100 Products for 2012
MALVERN, PA — (Marketwire) — 12/03/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that three of its products were featured in EDN magazine-s prestigious list of Hot 100 Products for 2012, which highlights the electronics industry-s most significant products of the year based on innovation, significance, usefulness, and popularity. Vishay-s VLMx1500-GS08 series of ultra-bright LEDs and VSMY7852X01 and VSMY7850X01 infrared (IR) emitters were included in the Optoelectronics and L
Vishay Intertechnology Releases Fully Integrated Proximity Sensor Combining IR Emitter, Photo-Pin-Diode, Signal Processing IC, and 16-Bit ADC in Compact 4.85 mm x 2.35 mm x 0.83 mm Package
MALVERN, PA — (Marketwire) — 12/03/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today added to its optoelectronics portfolio by introducing a fully integrated proximity sensor that combines an IR emitter, photo-pin-diode, signal processing IC, and 16-bit ADC in one small 4.85 mm x 2.35 mm x 0.83 mm surface-mount package. The space-saving VCNL3020 supports an easy-to-use I²C bus communication interface, and it features an interrupt function and an integrated external emitter driver to e
New Vishay Siliconix Power MOSFETs Offer Industry-Low On-Resistance Down to 43 Milliohms at 4.5 V in Industry-s Smallest Chipscale MICRO FOOT(R) 0.8 mm by 0.8 mm Package
MALVERN, PA — (Marketwire) — 11/29/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 12 V and 20 V n-channel and p-channel TrenchFET® power MOSFETs with the industry-s lowest on-resistance in the industry-s smallest CSP form factor: the 0.8 mm by 0.8 by 0.4 mm MICRO FOOT® package.The devices released today will be used for battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices.
Vishay Launches – 20 V P-Channel MOSFET in 3.3 mm Square Package With Industry-Low On-Resistance of 4.8 Milliohms at a 4.5 V Gate Drive
MALVERN, PA — (Marketwire) — 11/26/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today released the , the industry-s first – 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 milliohms maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PC
Vishay Intertechnology to Present at 2012 West China Power Seminar on Nov. 24 in Xi-an
Held Jointly With the China Power Supply Society, Seminar to Explore Capacitors, Resistors, Inductors, MOSFETs, Power Modules, and Diodes in New Energy, Military, Communications, and Industrial Applications
Vishay Intertechnology Releases New Power Metal Strip(R) Battery Shunt Resistor With Molded Enclosure Featuring High 36 W Power Capability and Low Resistance of 100 Micro-Ohms in 8518 Package Size
MALVERN, PA — (Marketwire) — 11/21/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced a new Power Metal Strip® battery shunt resistor featuring a molded enclosure with a four-pin connector. Providing easy PCB connection to the shunt resistor assembly, the WSBM8518 allows design engineers to focus on circuit development instead of PCB connection issues.Built using proprietary processing techniques, the WSBM8518 combines a high 36 W power capability in the 8518 package size with
Vishay Intertechnology-s 45 V TMBS(R) Trench MOS Barrier Schottky Rectifiers and VJ Non-Magnetic Series MLCCs Win EDN China 2012 Innovation Awards
MALVERN, PA — (Marketwire) — 11/19/12 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its 45 V TMBS Trench MOS Barrier Schottky rectifiers and VJ Non-Magnetic Series MLCCs have won EDN China 2012 Innovation Awards. Presented at an award ceremony on Nov. 15 in Shanghai, the 45 V TMBS rectifiers received a Best Product Award in the Power Device and Module category while the VJ Non-Magnetic Series was honored with a Leading Product Award in the Passive Components and Sensors cat
Vishay Intertechnology Releases New AEC-Q101-Qualified 600 V Standard Rectifiers Featuring ESD Capability in Low-Profile SlimSMA(TM) Package
High Current Density Devices Provide Forward Currents up to 3 A
Vishay Intertechnology Releases New Series of Surface-Mount TransZorb(R) TVS in SlimSMA(TM) Package
Compact Devices Combine Ultra-Low 0.95 mm Profile With High Surge Capability to 600 W